Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications-Reference-Cited by-同舟云学术

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Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

Published:2016-02 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Geum Dae-Myeong,Park Min-Su,Lim Ju Young,Yang Hyun-Duk,Song Jin Dong,Kim Chang Zoo,Yoon Euijoon,Kim SangHyeon,Choi Won Jun

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep20610.pdf

Reference42 articles.

1. Del Alamo, J. A. Nanometre-scale electronics with III-V compound semiconductors. Nature 479, 317–323 (2011)

2. Mishra, U. K. et al. Ultra-High-speed Digital Circuit Performance in 0.2-μm Gate-Length AlInAs/GaInAs HEMT Technology. IEEE Elec. Dev. Lett. 9, 482–484 (1988)

3. Bett, A. W., Dimroth, F., Stollwerck, G. & Sulima, O. V. III-V compounds for solar cell applications. Appl. Phys. A 69, 119–129 (1999)

4. Yamaguchi, M., Takamoto, T., Araki, K. & Ekins-Daukes, N. Multi-junction III–V solar cells: current status and future potential. Solar Energy 79, -85 (2005)

5. Park, H., Fang, A. W., Kodama, S. & Bowers, J. E. Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells Opt. Express 13, 9460–9464 (2005)

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