Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments-Reference-Cited by-同舟云学术

Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments

Published:2015-08-27 Issue:1 Volume:1 Page:
ISSN:2373-8065
Container-title:npj Microgravity
language:en
Short-container-title:npj Microgravity

Author:

Inatomi Y^ORCID,Sakata K,Arivanandhan M,Rajesh G,Nirmal Kumar V,Koyama T,Momose Y,Ozawa T,Okano Y,Hayakawa Y

Publisher

Springer Science and Business Media LLC

Subject

Space and Planetary Science,Physics and Astronomy (miscellaneous),Agricultural and Biological Sciences (miscellaneous),Biochemistry, Genetics and Molecular Biology (miscellaneous),Materials Science (miscellaneous),Medicine (miscellaneous)

Link

http://www.nature.com/articles/npjmgrav201511.pdf

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4. Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS et al. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Lett 2012: 12: 2060–2066.

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