Abstract
AbstractWe demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial 28Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17 V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1 mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing.
Funder
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Publisher
Springer Science and Business Media LLC
Subject
Computational Theory and Mathematics,Computer Networks and Communications,Statistical and Nonlinear Physics,Computer Science (miscellaneous)
Reference27 articles.
1. Vandersypen, L. M. K. et al. Interfacing spin qubits in quantum dots and donors-hot, dense, and coherent. npj Quantum Inf. 3, 34 (2017).
2. Veldhorst, M. et al. An addressable quantum dot qubit with fault-tolerant control-fidelity. Nat. Nanotechnol. 9, 981–985 (2014).
3. Yoneda, J. et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nat. Nanotechnol. 13, 102–106 (2018).
4. Yang, C. H. et al. Silicon qubit fidelities approaching incoherent noise limits via pulse engineering. Nat. Electron. 2, 151–158 (2019).
5. Lawrie, W. I. L. et al. Simultaneous driving of semiconductor spin qubits at the fault-tolerant threshold. Preprint at https://arxiv.org/abs/2109.07837 (2021).
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