Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices-Reference-Cited by-同舟云学术

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Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

Published:2024-05-22 Issue:22 Volume:24 Page:6553-6559
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Olsteins Dags¹^ORCID,Nagda Gunjan²,Carrad Damon J.¹^ORCID,Beznasyuk Daria V.¹,Petersen Christian E. N.¹,Martí-Sánchez Sara³,Arbiol Jordi³⁴^ORCID,Jespersen Thomas Sand¹²^ORCID

Affiliation:

1. Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark

2. Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain

4. ICREA, Passeig de Lluís Companys 23, 08010 Barcelona, Catalonia, Spain

Funder

HORIZON EUROPE European Research Council

European Commission

Ministerio de Ciencia e Innovaci?n

European Regional Development Fund

Villum Fonden

Generalitat de Catalunya

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c01038

Reference40 articles.

1. III–V compound semiconductor transistors—from planar to nanowire structures

2. Nanometre-scale electronics with III–V compound semiconductors

3. Scaling silicon-based quantum computing using CMOS technology

4. Crystal Phase Engineering in Single InAs Nanowires

5. Diameter-Dependent Electron Mobility of InAs Nanowires

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