The transport properties of oxygen vacancy-related polaron-like bound state in HfOx
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep03246.pdf
Reference48 articles.
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3. Zhang, H. et al. Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach. Appl. Phys. Lett. 98, 042105 (2011).
4. Govoreanu, B. et al. 10 × 10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. Electron Devices Meeting (IEDM), 2011 IEEE International, 31.36.31–31.36.34 (2011).
5. Gao, B. et al. Unified physical model of bipolar oxide-based resistive switching memory. IEEE Electron Device Lett. 30, 1326–1328 (2009).
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