Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells
Author:
Funder
European Commission
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference48 articles.
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1. A carbon electrode approach for TiO2-write-once-read-many resistive memories;Materials Science in Semiconductor Processing;2024-12
2. HfO2-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability;ACS Applied Electronic Materials;2023-12-27
3. Hfo2-Based Rram with In-Situ Conductive Channels Induced by Nanoparticles to Improve Stability;2023
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