Hfo2-Based Rram with In-Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Author:

Pan Jinyan,He Hongyang,Dan Yaping,Lin Yuxiang,Yang Shuya,Li Maojing,Li Tiejun

Publisher

Elsevier BV

Reference54 articles.

1. Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells;S Kalem;Mater. Sci. Semicond. Process,2023

2. Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays;G Niu;J. Phys. Chem. C,2017

3. High-performance resistive switching memory with embedded molybdenum disulfide quantum dots;X Yu;Appl. Phys. Lett,2021

4. Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation;D Alfaro Robayo;IEEE Trans. Electron Devices,2019

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