Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays-Reference-Cited by-同舟云学术

Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays

Published:2017-03-17 Issue:12 Volume:121 Page:7005-7014
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Niu Gang¹²^ORCID,Cartoixà Xavier³,Grossi Alessandro⁴,Zambelli Cristian⁴,Olivo Piero⁴,Perez Eduardo²,Schubert Markus Andreas²,Zaumseil Peter²,Costina Ioan²,Schroeder Thomas²⁵,Wenger Christian²

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China

2. IHP GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

3. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain

4. Dip. di Ingegneria, Università degli Studi di Ferrara, Via Saragat 1, Ferrara 44122, Italy

5. Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany

Funder

Ministerio de Econom??a y Competitividad

Deutsche Forschungsgemeinschaft

National Natural Science Foundation of China

European Commission

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b12771

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1. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

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3. Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

4. Non-Volatile Resistive Memory Switching in Pulsed Laser Deposited Rare-Earth Gallate-GdGaO3 Thin Films

5. Unipolar Resistive Switching and Associated Photoresponse in Sm doped BiFeO3 Thin Film Grown by RF Sputtering

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