Silver Iodide Induced Resistive Switching in CsPbI 3 Perovskite‐Based Memory Device-Reference-Cited by-同舟云学术

Silver Iodide Induced Resistive Switching in CsPbI 3 Perovskite‐Based Memory Device

Published:2019-03-14 Issue:7 Volume:6 Page:1802071
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Ge Shuaipeng¹,Huang Yunxia¹,Chen Xiaojuan¹,Zhang Xinran¹,Xiang Zhongcheng¹,Zhang Ruoxuan¹,Li Wenping¹,Cui Yimin¹^ORCID

Affiliation:

1. Key Laboratory of Micro‐nano Measurement‐Manipulation and Physics Ministry of EducationDepartment of PhysicsBeihang University Beijing 100191 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201802071

Reference64 articles.

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5. Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

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