A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory-Reference-Cited by-同舟云学术

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Published:2013-10-16 Issue:1 Volume:4 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Lee Myoung-Jae,Lee Dongsoo,Cho Seong-Ho,Hur Ji-Hyun,Lee Sang-Moon,Seo David H,Kim Dong-Sik,Yang Moon-Seung,Lee Sunghun,Hwang Euichul,Uddin Mohammad Rakib,Kim Hojung,Chung U-In,Park Youngsoo,Yoo In-Kyeong

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms3629.pdf

Reference33 articles.

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3. Lee, M.-J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures. Nat. Mater. 10, 625–630 (2011).

4. Borghetti, J. et al. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication. Nature 464, 873–876 (2010).

5. Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature 453, 80–83 (2008).

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