Ambipolar Landau levels and strong band-selective carrier interactions in monolayer WSe2
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://www.nature.com/articles/s41563-018-0036-2.pdf
Reference34 articles.
1. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
2. Xiao, D., Liu, G.-B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012).
3. Li, X., Zhang, F. & Niu, Q. Unconventional quantum Hall effect and tunable spin Hall effect in Dirac materials: application to an isolated MoS2 trilayer. Phys. Rev. Lett. 110, 066803 (2013).
4. Rose, F., Goerbig, M. O. & Piéchon, F. Spin- and valley-dependent magneto-optical properties of MoS2. Phys. Rev. B 88, 125438 (2013).
5. Xu, X., Yao, W., Xiao, D. & Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 10, 343–350 (2014).
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