Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an IsolatedMoS2Trilayer-Reference-Cited by-同舟云学术

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Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an IsolatedMoS2Trilayer

Published:2013-02-05 Issue:6 Volume:110 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Li Xiao,Zhang Fan,Niu Qian

Funder

U.S. Department of Energy

Defense Advanced Research Projects Agency

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.110.066803/fulltext

Reference41 articles.

1. Two-dimensional atomic crystals

2. Emerging Photoluminescence in Monolayer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Single-layer MoS2 transistors

5. The electronic properties of graphene

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4. Thermionic enhanced heat transfer in x-ray tubes;Applied Physics Letters;2024-01-01

5. Energy Levels of Quantum Dots in Monolayer of Molybdenum Disulfide MoS$$_2$$;International Journal of Theoretical Physics;2023-11-29

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