Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation-Reference-Cited by-同舟云学术

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Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

Published:2014-11-27 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Sun Huabin,Wang Qijing,Li Yun,Lin Yen-Fu,Wang Yu,Yin Yao,Xu Yong,Liu Chuan,Tsukagoshi Kazuhito,Pan Lijia,Wang Xizhang,Hu Zheng,Shi Yi

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep07227.pdf

Reference32 articles.

1. Naber, R. C. G. et al. High-performance solution-processed polymer ferroelectric field-effect transistors. Nat. Mater. 4, 243 (2005).

2. Guo, Y. et al. Functional Organic Field-Effect Transistors. Adv. Mater. 22, 4427 (2010).

3. Kim, R. H. et al. Non-volatile organic memory with sub-millimetre bending radius. Nat. Commun. 5, 1; 10.1038/ncomms4583 (2014).

4. Ng, T. N. et al. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory. Sci. Rep. 2, 585; 10.1038/srep00585 (2012).

5. Zhao, D. et al. Polarization fatigue of organic ferroelectric capacitors. Sci. Rep. 4, 5075; 10.1038/srep05075 (2014).

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