Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode-Reference-Cited by-同舟云学术

Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

Published:2018-11-02 Issue:1 Volume:2 Page:
ISSN:2397-7132
Container-title:npj 2D Materials and Applications
language:en
Short-container-title:npj 2D Mater Appl

Author:

Li Tiantian,Mao Dun,Petrone Nick W.,Grassi Robert,Hu Hao^ORCID,Ding Yunhong^ORCID,Huang Zhihong,Lo Guo-Qiang,Hone James C.,Low Tony,Wong Chee Wei,Gu Tingyi

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://www.nature.com/articles/s41699-018-0080-4.pdf

Reference60 articles.

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3. Liang, D. & Bowers, J. E. Recent progress in lasers on silicon. Nat. Photon. 4, 511–517 (2010).

4. Kang, Y. et al. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product. Nat. Photon. 3, 59–63 (2009).

5. Michel, J., Liu, J. & Kimerling, L. C. High-performance Ge-on-Si photodetectors. Nat. Photon. 4, 527–534 (2010).

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