Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep23621.pdf
Reference42 articles.
1. Ohtomo, A. & Hwang, H. Y. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface. Nature 427, 423–426 (2004).
2. Herranz, G. et al. High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality, and Perspectives. Phys. Rev. Lett. 98, 216803 (2007).
3. Siemons, W. et al. Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping. Phys. Rev. Lett. 98, 196802 (2007).
4. Kalabukhov, A. et al. Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3∕SrTiO3 interface. Phys. Rev. B 75, 121404 (2007).
5. Seo, S. S. A. et al. Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures. Appl. Phys. Lett. 95, 082107 (2009).
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