Origin of Charge Density atLaAlO3onSrTiO3Heterointerfaces: Possibility of Intrinsic Doping-Reference-Cited by-同舟云学术

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Origin of Charge Density atLaAlO3onSrTiO3Heterointerfaces: Possibility of Intrinsic Doping

Published:2007-05-08 Issue:19 Volume:98 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Siemons Wolter,Koster Gertjan,Yamamoto Hideki,Harrison Walter A.,Lucovsky Gerald,Geballe Theodore H.,Blank Dave H. A.,Beasley Malcolm R.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.98.196802/fulltext

Reference10 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Erratum: Corrigendum: A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

3. Electronically coupled complementary interfaces between perovskite band insulators

4. Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures

5. Elementary Electronic Structure

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