Abstract
Antiferromagnetic (AFM) spintronics offers advantages over ferromagnetic (FM) spintronics, such as zero stray fields, closer packing, and imperviousness to disruptive fields. Anisotropic magnetoresistance (AMR) can be enhanced by materials with pronounced spin-orbit coupling (SOC) and magnetocrystalline anisotropies. AMR research aims to develop new materials and heterostructures with enhanced and tunable anisotropic transport properties for advanced electronic devices. The nonmagnetic ground state of iridium pseudospin moments in SrIrO3 and CaIrO3 is determined by SOC and electron correlations (U). This study shows that by coupling CaIrO3 with a severely distorted canted AFM manganite CaMnO3, the AMR can be increased by more than one order of magnitude, primarily due to interlayer coupling. Additionally, the spin-flop transition in a nearly Mott region contributes to an unprecedented AMR of 70%, two orders of magnitude larger than previously achieved. The study demonstrates that thin films of canted AFM phases of CaMnO3 and CaIrO3 exhibit dimensionality control, with a diminishing magnetic moment, and the valence state can be altered at interfaces in superlattices involving manganites.