Author:
Lee Sang Wook,Park Seung Joo,Campbell Eleanor E. B.,Park Yung Woo
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Reference35 articles.
1. Kahng, D. & Sze, S. M. A floating gate and its application to memory devices. Bell Syst. Tech. J. 46, 1288–1295 (1967).
2. Brown, W. D. & Brewer, J. E. Nonvolatile Semiconductor Memory Technology – A Comprehensive Guide to Understanding and Using NVSM Devices (IEEE PRESS, 1998).
3. Masuoka, F., Asano, M., Iwahashi, H., Komuro, T. & Tanaka, S. A new flash E2PROM cell using triple polysilicon technology. IEDM Tech. Dig. 17.3, 464–467 (1984).
4. Shim, S. I., Yeh, F. C., Wang, X. W. & Ma, T. P. SONOS-type flash memory cell with metal/Al2O3/SiN/Si3N4/Si structure for low-voltage high-speed program/erase operation. IEEE Elec. Dev. Lett. 29, 512–514 (2008).
5. Hanafi, H. I., Tiwari, S. & Khan, I. Fast and long retention-time nano-crystal memory. IEEE Trans. Elec. Dev. 43, 1335–1558 (1996).
Cited by
59 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献