Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias-Reference-Cited by-同舟云学术

Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias

Published:2014-04-10 Issue:8 Volume:6 Page:5713-5718
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Dapeng¹,Hung Mai Phi¹,Jiang Jingxin¹,Toda Tatsuya¹,Furuta Mamoru¹²

Affiliation:

1. Department of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan

2. Institute for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am500300g

Reference31 articles.

1. Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

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