A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition-Reference-Cited by-同舟云学术

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A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition

Published:2024-03 Issue:3 Volume:71 Page:1913-1919
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hung Hao-Chun¹^ORCID,Chang Hung-Chi¹,Chang Fang-Yu¹,Liu Han-Yin²^ORCID,Hsu Wei-Chou¹

Affiliation:

1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

2. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan

Funder

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10413978.pdf?arnumber=10413978

Reference25 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. Indium Zinc Oxide Nanosheet Transistor With 2 nm Channel Thickness for Monolithic Three-Dimensional Integrated Circuit

4. High performance solution-processed amorphous zinc tin oxide thin film transistor

5. High-Performance Thin Film Transistor with Amorphous In$_{2}$O$_{3}$–SnO$_{2}$–ZnO Channel Layer

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