Neon Ion Beam Lithography (NIBL)-Reference-Cited by-同舟云学术

Neon Ion Beam Lithography (NIBL)

Published:2011-09-19 Issue:10 Volume:11 Page:4343-4347
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Winston Donald¹,Manfrinato Vitor R.¹,Nicaise Samuel M.¹,Cheong Lin Lee¹,Duan Huigao¹,Ferranti David²,Marshman Jeff²,McVey Shawn²,Stern Lewis²,Notte John²,Berggren Karl K.¹

Affiliation:

1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. Carl Zeiss NTS, LLC, Peabody, Massachusetts 01960, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202447n

Reference31 articles.

1. Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography

2. Resolution limits for electron-beam lithography

3. An empirical stopping power relationship for low-energy electrons

4. Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

5. Helium ion microscope: A new tool for nanoscale microscopy and metrology

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