Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography-Reference-Cited by-同舟云学术

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Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography

Published:2009 Issue:6 Volume:27 Page:2622
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yang Joel K. W.,Cord Bryan,Duan Huigao,Berggren Karl K.,Klingfus Joseph,Nam Sung-Wook,Kim Ki-Bum,Rooks Michael J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 152 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da);ACS Nano;2024-08-20

2. Advanced lithography materials: From fundamentals to applications;Advances in Colloid and Interface Science;2024-07

3. Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems;Polymers;2024-03-19

4. Light and matter co-confined multi-photon lithography;Nature Communications;2024-03-16

5. Structural basis for autoinhibition by the dephosphorylated regulatory domain of Ycf1;Nature Communications;2024-03-16

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