MOCVD of Titanium Nitride from a New Precursor, Ti[N(CH3)C2H5]4-Reference-Cited by-同舟云学术

MOCVD of Titanium Nitride from a New Precursor, Ti[N(CH3)C2H5]4

Published:1997-01-01 Issue:1 Volume:9 Page:76-80
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Shin H.-K.,Shin H.-J.,Lee J.-G.¹,Kang S-W.,Ahn B.-T.

Affiliation:

1. Kookmin University, Department of Metallurgical Engineering 861-1, Joengneung-Dong, Sungbuk-Gu, Seoul, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm960171w

Reference25 articles.

1. High‐temperature contact structures for silicon semiconductor devices

2. TiN as a diffusion barrier in the Ti-Pt-Au beam-lead metal system

3. Ohto, K.; Ueno, K.; Tsunenari, K.; Numajiri, K.; Okamura, M.; Jinba, H. InAdvancedMetallization for LLSI Applications in 1993; Faureau, P., Shacham-Diamand, Y., Horiike, Y., Eds.; Mater. Res. Soc. Pittsburgh, 1994; p 151.

4. A Kinetic Study of Titanium Nitride Chemical Vapor Deposition Using Nitrogen, Hydrogen, and Titanium Tetrachloride

5. A Thermodynamic Analysis of Selective Area CVD of Titanium Nitride Compound by the Alternating Cyclic Method

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