A Thermodynamic Analysis of Selective Area CVD of Titanium Nitride Compound by the Alternating Cyclic Method-Reference-Cited by-同舟云学术

A Thermodynamic Analysis of Selective Area CVD of Titanium Nitride Compound by the Alternating Cyclic Method

Published:1994-04-01 Issue:4 Volume:141 Page:1086-1094
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Wang Q. S.¹²³,Reisman A.¹²³,Temple D.¹²³

Affiliation:

1. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695‐8202

2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911

3. MCNC, Electronic Technologies Division, Research Triangle Park, North Carolina 27709‐2889

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054846/pdf

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1. Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: A Thermodynamic Analysis. I. The System Si-Ge-Cl-H;Journal of The Electrochemical Society;2000

2. Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: Experimental Data: I. Deposition Parameters;Journal of The Electrochemical Society;2000

3. An Alternative Derivation for the Equilibrium Constant of Binary Solid Solution‐Vapor Systems;Journal of The Electrochemical Society;1999-10-01

4. MOCVD of Titanium Nitride from a New Precursor, Ti[N(CH3)C2H5]4;Chemistry of Materials;1997-01-01

5. Thermodynamics of the Formation of TiN from TiCl4 ‐ NH 3 ‐ H 2 on a Patterned Oxidized Silicon Substrate;Journal of The Electrochemical Society;1996-10-01