The Two-Dimensional AxCdxBi4–xQ6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials-Reference-Cited by-同舟云学术

The Two-Dimensional AxCdxBi4–xQ6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials

Published:2017-05-12 Issue:20 Volume:139 Page:6978-6987
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Zhao Jing¹²,Islam Saiful M.²,Kontsevoi Oleg Y.³,Tan Gangjian²,Stoumpos Constantinos C.²^ORCID,Chen Haijie²,Li R. K.¹,Kanatzidis Mercouri G.²^ORCID

Affiliation:

1. Beijing Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China

2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

3. Department of Physics & Astronomy, Northwestern University, Evanston, Illinois 60208, United States

Funder

Basic Energy Sciences

U.S. Department of Homeland Security

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.7b02243

Reference74 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Electronic structure of layered quaternary chalcogenide materials for band-gap engineering: The example ofCs2MIIM3IVQ8

3. Ruddlesden–Popper Hybrid Lead Iodide Perovskite 2D Homologous Semiconductors

4. Superconductivity in Layered Structure Organometallic Crystals

5. Superconductivity in the intercalated graphite compounds C6Yb and C6Ca

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