Electronic structure of layered quaternary chalcogenide materials for band-gap engineering: The example ofCs2MIIM3IVQ8-Reference-Cited by-同舟云学术

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Electronic structure of layered quaternary chalcogenide materials for band-gap engineering: The example ofCs2MIIM3IVQ8

Published:2016-04-22 Issue:16 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Besse Rafael,Sabino Fernando P.,Da Silva Juarez L. F.

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Fundação de Amparo à Pesquisa do Estado de São Paulo

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.165205/fulltext

Reference65 articles.

1. Thin film CdS/CdTe solar cells: Research perspectives

2. Phase-change materials for rewriteable data storage

3. Van der Waals heterostructures

4. Effects of Cu in CdS∕CdTe solar cells studied with patterned doping and spatially resolved luminescence

5. Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries

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1. First-principles study of structural, dynamical, elastic, electronic, optical, and thermodynamic properties of Na₂ZnSnS₄ compound;Canadian Journal of Physics;2022-09-01

2. Exploring the Physical Properties of Cu₂WSe₄ for Optoelectronic and Thermoelectric Applications: A DFT Study;ECS Journal of Solid State Science and Technology;2022-03-01

3. The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies;Journal of Materials Science: Materials in Electronics;2020-11-04

4. First-Principles Exploration of Two-Dimensional Transition Metal Dichalcogenides Based on Fe, Co, Ni, and Cu Groups and Their van der Waals Heterostructures;ACS Applied Energy Materials;2019-11-26

5. The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization;Journal of Alloys and Compounds;2019-04

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