Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor
Author:
Affiliation:
1. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, 02138
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm021772s
Reference27 articles.
1. The Effect of Adding Hexafluoroacetylacetone on Chemical Vapor Deposition of Copper Using Cu(I) and Cu(II) Precursor Systems
2. Semiconductor Industry Association International. International Technology Road map for Semiconductors 2001 edn,http://public.itrs.net/.
3. Diffusion Barrier Deposition on a Copper Surface by Atomic Layer Deposition
4. Effect of Annealing of Titanium Nitride on the Diffusion Barrier Property in Cu Metallization
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