Nonequilibrium Phonon Thermal Resistance at MoS<sub>2</sub>/Oxide and Graphene/Oxide Interfaces-Reference-Cited by-同舟云学术

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Nonequilibrium Phonon Thermal Resistance at MoS₂/Oxide and Graphene/Oxide Interfaces

Published:2022-05-04 Issue:19 Volume:14 Page:22372-22380
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zheng Weidong¹²^ORCID,McClellan Connor J.³^ORCID,Pop Eric³⁴^ORCID,Koh Yee Kan¹²^ORCID

Affiliation:

1. Department of Mechanical Engineering, National University of Singapore, Queenstown 117576, Singapore

2. Centre for Advanced 2D Materials, National University of Singapore, Queenstown 117542, Singapore

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

4. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

Funder

Defense Advanced Research Projects Agency

Ministry of Education - Singapore

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c02062

Reference72 articles.

1. Photoresponse of Natural van der Waals Heterostructures

2. Approaching ballistic transport in monolayer MoS2 transistors with self-aligned 10 nm top gates

3. Self-Heating and Failure in Scalable Graphene Devices

4. Probing Anisotropic Thermal Conductivity of Transition Metal Dichalcogenides MX 2 (M = Mo, W and X = S, Se) using Time‐Domain Thermoreflectance

5. Temperature Dependence of Anisotropic Thermal‐Conductivity Tensor of Bulk Black Phosphorus

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