Probing Anisotropic Thermal Conductivity of Transition Metal Dichalcogenides MX 2 (M = Mo, W and X = S, Se) using Time‐Domain Thermoreflectance
Author:
Affiliation:
1. Department of Mechanical Engineering University of Colorado Boulder CO 80309 USA
2. Institute of Engineering Thermophysics Shanghai Jiao Tong University Shanghai 200240 China
Funder
National Science Foundation
Defense Advanced Research Projects Agency
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201701068
Reference60 articles.
1. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
2. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
3. Emerging Photoluminescence in Monolayer MoS2
4. Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers
5. Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
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