Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics-Reference-Cited by-同舟云学术

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Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

Published:2023-03-23 Issue:13 Volume:15 Page:16842-16852
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tsurumaki-Fukuchi Atsushi¹^ORCID,Katase Takayoshi²^ORCID,Ohta Hiromichi³^ORCID,Arita Masashi¹,Takahashi Yasuo¹

Affiliation:

1. Faculty of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan

2. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan

3. Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c21568

Reference54 articles.

1. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

2. Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

3. Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

4. Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

5. Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaO_x-Based RRAM by Stack Engineering

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1. Technology and Integration Roadmap for Optoelectronic Memristor;Advanced Materials;2023-12-10

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