Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaO<sub><italic>x</italic></sub>-Based RRAM by Stack Engineering-Reference-Cited by-同舟云学术

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Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaO_x-Based RRAM by Stack Engineering

Published:2015-01 Issue:1 Volume:36 Page:32-34
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Prakash Amit,Park Jaesung,Song Jeonghwan,Woo Jiyong,Cha Eui-Jun,Hwang Hyunsang

Funder

Pohang University of Science and Technology-Samsung Electronics ReRAM Cluster Research Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6994886/06967704.pdf?arnumber=6967704

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