Current Injection into Single-Crystalline Carbon-Doped <i>h</i>-BN toward Electronic and Optoelectronic Applications-Reference-Cited by-同舟云学术

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Current Injection into Single-Crystalline Carbon-Doped h-BN toward Electronic and Optoelectronic Applications

Published:2022-05-27 Issue:22 Volume:14 Page:25731-25740
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ngamprapawat Supawan¹,Nishimura Tomonori¹,Watanabe Kenji²^ORCID,Taniguchi Takashi³^ORCID,Nagashio Kosuke¹^ORCID

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan

2. Research Center for Functional Materials, National Institute for Materials Science, Ibaraki 305-0044, Japan

3. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki 305-0044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Mitsubishi Foundation

Canon Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c04544

Reference54 articles.

1. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

2. Boron nitride substrates for high-quality graphene electronics

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

5. Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-cost growth of high-quality monoisotopic hexagonal boron nitride single crystals using a boric acid precursor;Journal of Materials Chemistry C;2024

2. From h‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h‐BN for Applications in Electronic and Optoelectronic Devices;Advanced Electronic Materials;2023-06-30

3. Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors;Nanoscale;2023

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