Low-cost growth of high-quality monoisotopic hexagonal boron nitride single crystals using a boric acid precursor-Reference-Cited by-同舟云学术

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Low-cost growth of high-quality monoisotopic hexagonal boron nitride single crystals using a boric acid precursor

Published:2024 Issue:35 Volume:12 Page:13854-13862
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tian Ming¹,Ding Cui²,Shi Hui¹,Shu Jun-peng¹,Chen Ruo-wang¹,Akash Md Al Shahriar¹,Hu Zhen-ning¹,Afzal Nadia¹,Lin Tao²^ORCID,Wan Neng¹^ORCID

Affiliation:

1. Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, 210096 Nanjing, China

2. Guangxi Key Lab for Relativistic Astrophysics, Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, 530004 Nanning, China

Abstract

This work demonstrates the successful synthesis of high-quality monoisotopic hBN single crystals (hNatBN, h10BN and h11BN) with good uniformity using a low-cost isotope-enriched boric acid precursor.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC02524E

Reference37 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. One-Dimensional Electrical Contact to a Two-Dimensional Material

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. Isotope effects on the optical spectra of semiconductors

5. Ultralow-loss polaritons in isotopically pure boron nitride

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