Engineering the Optoelectronic Properties of 2D Hexagonal Boron Nitride Monolayer Films by Sulfur Substitutional Doping-Reference-Cited by-同舟云学术

Engineering the Optoelectronic Properties of 2D Hexagonal Boron Nitride Monolayer Films by Sulfur Substitutional Doping

Published:2022-04-04 Issue:14 Volume:14 Page:16453-16461
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tan Biying¹²,Wu You¹²,Gao Feng²,Yang Huihui²,Hu Yunxia²^ORCID,Shang Huiming¹²,Zhang Xin¹²^ORCID,Zhang Jia²^ORCID,Li Zhonghua¹²^ORCID,Fu YongQing³^ORCID,Jia Dechang⁴^ORCID,Zhou Yu⁴,Xiao Haiying⁴,Hu PingAn¹²⁴⁵^ORCID

Affiliation:

1. School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China

2. Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China

3. Faculty of Engineering & Environment, Northumbria University, Newcastle upon Tyne NE1 8ST, U.K.

4. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, P. R. China

5. State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin 150080, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

State Key Laboratory of Robotics and System

National Natural Science Foundation of China

International Exchange Grant

Newton Mobility Grant

Publisher

American Chemical Society (ACS)

Subject