Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor-Reference-Cited by-同舟云学术

Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor

Published:2022-05-12 Issue:20 Volume:14 Page:23617-23623
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Choi Hong Kyw¹,Park Jaesung²^ORCID,Gwon Oh Hun³,Kim Jong Yun⁴,Kang Seok-Ju⁴,Byun Hye Ryung⁴,Shin BeomKyu³,Jang Seo Gyun³,Kim Han Seul⁵^ORCID,Yu Young-Jun³⁴^ORCID

Affiliation:

1. Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Korea

2. Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea

3. Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea

4. Institute of Quantum Systems, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Korea

5. Center for Supercomputing Applications, National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information (KISTI), Daejeon 34141, Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Korea Institute of Science and Technology Information

Korea Institute for Advancement of Technology

The Research on Redefinition of SI Base Units funded by the Korea Research Institute of Standards and Science (KRISS)

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c02380