Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors

Author:

Pan Yuan12,Zhao Qixiao12ORCID,Gao Feng3,Dai Mingjin4,Gao Wei12ORCID,Zheng Tao12,Su Shichen125ORCID,Li Jingbo12,Chen Hongyu12ORCID

Affiliation:

1. Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China

2. Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China

3. Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China

4. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

5. SCNU Qingyuan Institute of Science and Technology Innovation Co., Ltd., Qingyuan 511517, P. R. China

Funder

National Natural Science Foundation of China

South China Normal University

Pearl River Talent Recruitment Program

Science and Technology Program of Guangzhou

Songshan Lake Materials Laboratory

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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