Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes-Reference-Cited by-同舟云学术

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Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes

Published:2023-01-23 Issue:4 Volume:15 Page:5495-5503
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Song Young Geun¹,Kim Ji Eun¹²,Kwon Jae Uk¹²,Chun Suk Yeop¹³,Soh Keunho¹²,Nahm Sahn²³^ORCID,Kang Chong-Yun¹³^ORCID,Yoon Jung Ho¹^ORCID

Affiliation:

1. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul02791, Republic of Korea

2. Department of Materials Science and Engineering, Korea University, Seoul02841, Republic of Korea

3. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul02841, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c21019

Reference55 articles.

1. Mediating Short-Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores

2. A Memristor‐Based Silicon Carbide for Artificial Nociceptor and Neuromorphic Computing

3. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

4. Full-Inorganic Flexible Ag₂S Memristor with Interface Resistance–Switching for Energy-Efficient Computing

5. Memristor modeling: challenges in theories, simulations, and device variability

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