Full-Inorganic Flexible Ag<sub>2</sub>S Memristor with Interface Resistance–Switching for Energy-Efficient Computing-Reference-Cited by-同舟云学术

Full-Inorganic Flexible Ag₂S Memristor with Interface Resistance–Switching for Energy-Efficient Computing

Published:2022-09-14 Issue:38 Volume:14 Page:43482-43489
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhu Yuan¹^ORCID,Liang Jia-sheng²,Shi Xun²^ORCID,Zhang Zhen¹^ORCID

Affiliation:

1. Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala 75121, Sweden

2. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Funder

Shanghai Municipal People's Government

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c11183

Reference34 articles.

1. Deep Residual Learning for Image Recognition

2. Deep learning

3. Memory leads the way to better computing

4. In-memory computing with resistive switching devices

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