Analog Tunnel Memory Based on Programmable Metallization for Passive Neuromorphic Circuits-Reference-Cited by-同舟云学术

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Analog Tunnel Memory Based on Programmable Metallization for Passive Neuromorphic Circuits

Published:2022-10-12 Issue:42 Volume:14 Page:47941-47951
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ma Zelin¹²,Ge Jun¹²^ORCID,Chen Wanjun¹²,Cao Xucheng¹²,Diao Shanqing¹²,Huang Haiming¹²^ORCID,Liu Zhiyu¹²,Wang Weiliang³^ORCID,Pan Shusheng¹²

Affiliation:

1. Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou, Guangdong510555, People’s Republic of China

2. Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou, Guangdong510006, People’s Republic of China

3. School of Physics, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou, Guangdong510275, People’s Republic of China

Funder

Guangzhou University

Department of Education of Guangdong Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c14809

Reference39 articles.

1. Memristive crossbar arrays for brain-inspired computing

2. Resistive switching materials for information processing

3. Probing nanoscale oxygen ion motion in memristive systems

4. Spatiotemporal characterization of the field-induced insulator-to-metal transition

5. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

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1. Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing;Advanced Materials;2023-11-27

2. A storage-efficient SNN–CNN hybrid network with RRAM-implemented weights for traffic signs recognition;Engineering Applications of Artificial Intelligence;2023-08

3. Enhanced temporal variation of resistive switching memories by insertion of rough titanium oxide thin film;Applied Physics Letters;2023-07-24

4. Criticality and Neuromorphic Sensing in a Single Memristor;Nano Letters;2023-06-16

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