Spatiotemporal characterization of the field-induced insulator-to-metal transition

Author:

del Valle Javier1234ORCID,Vargas Nicolas M.1ORCID,Rocco Rodolfo35ORCID,Salev Pavel1,Kalcheim Yoav124ORCID,Lapa Pavel N.12ORCID,Adda Coline14ORCID,Lee Min-Han125ORCID,Wang Paul Y.14,Fratino Lorenzo35ORCID,Rozenberg Marcelo J.35ORCID,Schuller Ivan K.1ORCID

Affiliation:

1. Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093, USA.

2. Department of Quantum Matter Physics, University of Geneva, 1211 Geneva, Switzerland.

3. Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.

4. Department of Material Science and Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel.

5. Materials Science and Engineering Program, University of California San Diego, La Jolla, CA 92093, USA.

Abstract

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Funder

National Science Foundation

U.S. Department of Energy

Swiss National Science Foundation

Association Nationale de la Recherche et de la Technologie

Association Neurofibromatoses et Recklinghause

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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