Unconventional Terahertz Carrier Relaxation in Graphene Oxide: Observation of Enhanced Auger Recombination Due to Defect Saturation-Reference-Cited by-同舟云学术

Unconventional Terahertz Carrier Relaxation in Graphene Oxide: Observation of Enhanced Auger Recombination Due to Defect Saturation

Published:2014-02-10 Issue:3 Volume:8 Page:2486-2494
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Jaeseok¹,Oh Juyeong²,In Chihun¹,Lee Yun-Shik³,Norris Theodore B.⁴,Jun Seong Chan²,Choi Hyunyong¹

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

2. Department of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea

3. Department of Physics, Oregon State University, Corvallis, Oregon 97331-6507, United States

4. Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn406066f

Reference54 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. The electronic properties of graphene

4. Large-scale pattern growth of graphene films for stretchable transparent electrodes

5. A Chemical Route to Graphene for Device Applications

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