Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region-Reference-Cited by-同舟云学术

Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

Published:2020-09-01 Issue:10 Volume:7 Page:2713-2722
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Elbaz Anas¹²,Arefin Riazul¹,Sakat Emilie¹^ORCID,Wang Binbin¹,Herth Etienne¹,Patriarche Gilles¹,Foti Antonino³^ORCID,Ossikovski Razvigor³^ORCID,Sauvage Sebastien¹,Checoury Xavier¹,Pantzas Konstantinos¹,Sagnes Isabelle¹,Chrétien Jérémie⁴^ORCID,Casiez Lara⁵,Bertrand Mathieu⁵,Calvo Vincent⁴,Pauc Nicolas⁴,Chelnokov Alexei⁵,Boucaud Philippe⁶,Boeuf Frederic²,Reboud Vincent⁵,Hartmann Jean-Michel⁵,El Kurdi Moustafa¹^ORCID

Affiliation:

1. Université Paris-Saclay, CNRS, C2N, 91120, Palaiseau, France

2. STMicroelectronics, Rue Jean Monnet 38054 Crolles, France

3. LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91120 Palaiseau, France

4. Univ. Grenoble Alpes, CEA, IRIG-DePhy, 38054 Grenoble, France

5. Univ. Grenoble Alpes, CEA, LETI, 38054 Grenoble, France

6. Université Côte d’Azur, CNRS, CRHEA, Rue Bernard Grégory, CS 10269, 06905 Sophia-Antipolis Cedex, France

Funder

Agence Nationale de la Recherche

Association Nationale de la Recherche et de la Technologie

Publisher

American Chemical Society (ACS)