High-Gain Silicon-Based InGaN/GaN Dot-in-Nanowire Array Photodetector
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
2. Department of Electrical Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205, Bangladesh
Funder
Horace H. Rackham School of Graduate Studies, University of Michigan
Division of Materials Research
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b00390
Reference38 articles.
1. III nitrides and UV detection
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3. Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon
4. Red-Emitting ( \(\lambda = 610\) nm) In0.51Ga0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon
5. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire
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