Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity-Reference-Cited by-同舟云学术

Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity

Published:2019-07-01 Issue:7 Volume:6 Page:1618-1625
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Nami Mohsen¹,Rashidi Arman¹,Monavarian Morteza¹^ORCID,Mishkat-Ul-Masabih Saadat¹,Rishinaramangalam Ashwin. K.¹,Brueck Steven R. J.¹,Feezell Daniel¹

Affiliation:

1. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico, United States

Funder

Defense Advanced Research Projects Agency

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b00639

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4. Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

5. Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

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