Dual-Limit Growth of Large-Area Monolayer Transition Metal Dichalcogenides-Reference-Cited by-同舟云学术

Dual-Limit Growth of Large-Area Monolayer Transition Metal Dichalcogenides

Published:2024-02-26 Issue:10 Volume:18 Page:7391-7401
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Xin Zeqin¹,Zhang Xiaolong¹,Guo Jing¹,Wu Yonghuang¹,Wang Bolun¹,Shi Run¹^ORCID,Liu Kai¹^ORCID

Affiliation:

1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People’s Republic of China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c09222

Reference70 articles.

1. Oxide Inhibitor-Assisted Growth of Single-Layer Molybdenum Dichalcogenides (MoX2, X = S, Se, Te) with Controllable Molybdenum Release

2. Transistors based on two-dimensional materials for future integrated circuits

3. Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors

4. Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory

5. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

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