Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory-Reference-Cited by-同舟云学术

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Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory

Published:2021-03-25 Issue:4 Volume:15 Page:6658-6668
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sasaki Taro¹,Ueno Keiji²,Taniguchi Takashi^ORCID,Watanabe Kenji^ORCID,Nishimura Tomonori¹,Nagashio Kosuke¹^ORCID

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan

2. Department of Chemistry, Saitama University, Saitama 338-8570, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Canon Foundation in Europe

Kioxia Cooperation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c10005

Reference61 articles.

1. Nonvolatile Memories Based on Graphene and Related 2D Materials

2. Two-dimensional materials for next-generation computing technologies

3. Recent Progress in Artificial Synapses Based on Two-Dimensional van der Waals Materials for Brain-Inspired Computing

4. Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

5. Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

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