Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics-Reference-Cited by-同舟云学术

Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Published:2023-01-30 Issue:3 Volume:17 Page:2653-2660
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ho Po-Hsun¹²^ORCID,Chang Jun-Ru¹,Chen Chun-Hsiang³,Hou Cheng-Hung⁴,Chiang Chun-Hao¹^ORCID,Shih Min-Chuan³,Hsu Hung-Chang³,Chang Wen-Hao⁵^ORCID,Shyue Jing-Jong⁴^ORCID,Chiu Ya-Ping²³,Chen Chun-Wei¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan

2. Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, Taiwan

3. Department of Physics, National Taiwan University, Taipei 106, Taiwan

4. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan

5. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan

Funder

Ministry of Education

National Taiwan University

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c10631

Reference44 articles.

1. 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

2. Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

3. Channel Length Scaling of MoS2MOSFETs

4. Ohmic Contact Engineering for Two-Dimensional Materials

5. Nature of carrier injection in metal/2D-semiconductor interface and its implications for the limits of contact resistance

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