Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel-Reference-Cited by-同舟云学术

Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel

Published:2020-08-20 Issue:9 Volume:14 Page:12064-12071
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Park Sam¹,Jeong Yeonsu¹,Jin Hye-Jin¹,Park Junkyu²,Jang Hyenam²,Lee Sol¹,Huh Woong³,Cho Hyunmin¹,Shin Hyung Gon¹,Kim Kwanpyo¹^ORCID,Lee Chul-Ho³^ORCID,Choi Shinhyun²,Im Seongil¹^ORCID

Affiliation:

1. Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. The school of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

3. KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

KU-KIST Graduate School of Converging Science and Technology, Korea University

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c05393

Reference40 articles.