Nonvolatile and Programmable Photodoping in MoTe 2 for Photoresist‐Free Complementary Electronic Devices-Reference-Cited by-同舟云学术

Nonvolatile and Programmable Photodoping in MoTe 2 for Photoresist‐Free Complementary Electronic Devices

Published:2018-11-04 Issue:52 Volume:30 Page:1804470
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liu Tao¹,Xiang Du¹,Zheng Yue²,Wang Yanan²,Wang Xinyun²,Wang Li³,He Jun⁴,Liu Lei⁵,Chen Wei¹²⁶⁷^ORCID

Affiliation:

1. Department of ChemistryNational University of Singapore 3 Science Drive 3 Singapore 117543 Singapore

2. Department of PhysicsNational University of Singapore 2 Science Drive 3 Singapore 117542 Singapore

3. Institute for Advanced Study and Department of PhysicsNanchang University 999 Xue Fu Da Dao Nanchang 33003 P. R. China

4. School of Physics and ElectronicsCentral South University 932 South Lushan Road Changsha 410083 P. R. China

5. State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsChinese Academy of Sciences No. 3888 Dongnanhu Road Changchun 130033 P. R. China

6. Centre for Advanced 2D Materials and Graphene Research CentreNational University of Singapore 6 Science Drive 2 Singapore 117546 Singapore

7. National University of Singapore (Suzhou) Research Institute 377 Lin Quan Street, Suzhou Industrial Park Jiang Su 215123 P. R. China

Funder

Natural Science Foundation of Jiangsu Province

National Research Foundation Singapore

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201804470

Reference36 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Channel Length Scaling of MoS2MOSFETs

4. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

5. Integrated Circuits Based on Bilayer MoS2 Transistors

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