Phase-Change Memory from Molecular Tellurides-Reference-Cited by-同舟云学术

Phase-Change Memory from Molecular Tellurides

Published:2023-12-20 Issue:1 Volume:18 Page:1063-1072
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Schenk Florian M.¹,Zellweger Till²,Kumaar Dhananjeya¹^ORCID,Bošković Darijan¹,Wintersteller Simon¹,Solokha Pavlo³^ORCID,De Negri Serena³^ORCID,Emboras Alexandros²^ORCID,Wood Vanessa⁴^ORCID,Yarema Maksym¹^ORCID

Affiliation:

1. Chemistry and Materials Design Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland

2. Integrated Systems Laboratory, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland

3. Dipartimento di Chimica e Chimica Industriale, Università degli Studi di Genova, I-16146 Genova, Italy

4. Materials and Device Engineering Group, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland

Funder

Werner Siemens-Stiftung

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c10312

Reference64 articles.

1. Compute Trends Across Three Eras of Machine Learning

2. An overview of phase-change memory device physics